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Observation of Distinct Bulk and Surface Chemical Environments in a Topological Insulator under Magnetic doping

机译:观察不同的本体和表面化学环境 磁掺杂下的拓扑绝缘子

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摘要

The influence of magnetic dopants on the electronic and chemical environmentsin topological insulators (TIs) is a key factor when considering possiblespintronic applications based on topological surface state properties. Here weprovide spectroscopic evidence for the presence of distinct chemical andelectronic behavior for surface and bulk magnetic doping of Bi2Te3. Theinclusion of Mn in the bulk of Bi2Te3 induces a genuine dilute ferromagneticstate, with reduction of the bulk band gap as the Mn content is increased.Deposition of Fe on the Bi2Te3 surface, on the other hand, favors the formationof iron telluride already at coverages as low as 0.07 monolayer, as aconsequence of the reactivity of the Te-rich surface. Our results identify thefactors that need to be controlled in the realization of magnetic nanosystemsand interfaces based on TIs.
机译:当考虑基于拓扑表面状态特性的自旋电子学应用时,磁性掺杂物对拓扑绝缘体(TI)中电子和化学环境的影响是关键因素。在这里,我们为Bi2Te3的表面和体磁掺杂提供了独特的化学和电子行为的光谱证据。 Bi2Te3的主体中包含Mn会诱发真正的稀铁磁态,随着Mn含量的增加,主体带隙会减小。低至0.07单层,这是富Te表面的反应性的结果。我们的结果确定了在基于TI的磁性纳米系统和界面的实现中需要控制的因素。

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